AMTP65H150G4LSGB

Single 650V N-Channel Gallium Nitride FET - DFN8X8 Package

General

General
Status Active
PackageDFN8X8
ConfigurationSingle
PolarityN-Channel
Electrical Characteristics
VDS Max650 V
VGS Max±18 V
RDS(on) @ VGS=10V150 mΩ
ID Max13 A
Total Gate Charge8.8 nC
Power Dissipation52 W