AMSB17N80C3
Single 900V N-Channel Silicon MOSFET - TO-263 Package
General
General
| Status | Active |
|---|---|
| Package | TO-263 |
| Configuration | Single |
| Polarity | N-Channel |
Electrical Characteristics
| VDS Max | 900 V |
|---|---|
| VGS Max | ±20 V |
| RDS(on) @ VGS=10V | 378 mΩ |
| RDS(on) @ VGS=7V | 389 mΩ |
| ID Max | 17 A |
| Total Gate Charge | 18 nC |
| Power Dissipation | 300 W |