ABD5B65M1
Single 650V N-Channel IGBT - TO-252 Package
General
General
| Status | Active |
|---|---|
| Package | TO-252 |
| Configuration | Single |
| Polarity | N-Channel |
Electrical Characteristics
| VDS Max | 650 V |
|---|---|
| VGS Max | ±30 V |
| RDS(on) @ VGS=10V | 165 mΩ |
| RDS(on) @ VGS=8V | 178 mΩ |
| ID Max | 14.3 A |
| Total Gate Charge | 4 nC |
| Power Dissipation | 50 W |